| PART |
Description |
Maker |
| UPC1658G UPC1658G-E1 |
RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
Low Noise, High Frequncy Si MMIC Amplifier(低噪声高频率放大
LOW NOISE/ HIGH FREQUENCY Si MMIC AMPLIFIER
LOW NOISE, HIGH FREQUENCY Si MMIC AMPLIFIER
LOW NOISE HIGH FREQUENCY Si MMIC AMPLIFIER
|
NEC Corp.
NEC[NEC]
|
| EL5134 EL5135 EL5235IS-T7 EL5235IS-T13 EL5235IS EL |
Single, 630MHz Low Noise Amplifier with Enable
Dual, 630MHz, Low Noise Amplifier with Enable
From old datasheet system
630MHz Gain of 5 Low Noise Amplifiers
630MHz, Gain of 5, Low Noise Amplifiers
|
INTERSIL[Intersil Corporation]
|
| EL2126CS-T EL2126CW-T EL2126CW-T7A EL2126CW-T7 EL2 |
Ultra-Low Noise/ Low Power/ Wideband Amplifier
Op Amp, 100MHz Wideband, Ultra Low Noise 1.3nV/√Hz, Low Power, 2.5-15VDC
Ultra-Low Noise Low Power Wideband Amplifier
|
INTERSIL[Intersil Corporation]
|
| EL2125 EL2125CS-T13 EL2125CS-T7 EL2125CW-T7 EL2125 |
Ultra-Low Noise, Low Power, Wideband Amplifier
Op Amp, 175MHz Wideband, Ultra Low Noise 0.83nV/√Hz, Low Power, 2.5-15VDC
Ultra-Low Noise/ Low Power/ Wideband Amplifier
|
Intersil Corporation
|
| OP-37AJ OP-37AZ OP-37BJ OP-37BZ OP-37CJ OP-37CZ OP |
LOW NOISE, PRECISION, HIGH SPEED OPERATIONAL AMPLIFIER(AVCL>=5)
703.02 Kbytes
LOW NOISE, PRECISION, HIGH SPEED OPERATIONAL AMPLIFIER(AVCL>=5)
LOW NOISE, PRECISION, HIGH SPEED OPERATIONAL AMPLIFIER(AVCL>=5) OP-AMP, 200 uV OFFSET-MAX, 63 MHz BAND WIDTH, CQCC20
|
AD[Analog Devices]
Analog Devices, Inc.
|
| OP-27EP OP-27GZ OP-27 OP-27AJ OP-27AZ OP-27BJ OP-2 |
LOW NOISE, PRECISION OPERATIONAL AMPLIFIER 低噪声，高精度运算放大器
Low Noise, Precision Operational Amplifier; Package: LCC:CER LEADLESS CHIP CARR; No of Pins: 20; Temperature Range: Military OP-AMP, 200 uV OFFSET-MAX, 8 MHz BAND WIDTH, PQCC20
Low Noise, Precision Operational Amplifier; Package: ROUND HEADER/METAL CAN; No of Pins: 8; Temperature Range: Military OP-AMP, 60 uV OFFSET-MAX, 8 MHz BAND WIDTH, MBCY8
4" CONN,COMP.,EMT,DC 低噪声，高精度运算放大器
LOW NOISE PRECISION OPERATIONAL AMPLIFIER
|
Analog Devices, Inc.
Linear Technology, Corp.
AD[Analog Devices]
|
| K4S64323LF-DG_S15 K4S64323LF-DG_S1H K4S64323LF-DG_ |
2M X 32 SYNCHRONOUS DRAM, 9 ns, PBGA90
2Mx32 Mobile SDRAM 90FBGA 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-SOIC -55 to 125
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 8-CDIP -55 to 125
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 20-LCCC -55 to 125
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-PDIP -55 to 125
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| ISL6566CR ISL6566IR ISL6566CRZ |
Single Output LDO, 500mA, Adj. (1.3 to 6.5V), Low Noise 8-SOIC -40 to 125
Dual Low-Noise Wide-Bandwidth Precision Amplifier 8-TSSOP -40 to 85
|
Intersil Corporation
|
| TGA4600-EPU |
60 GHz Low-Noise Amplifier
60GHz Low Noise Amplifier
|
TRIQUINT[TriQuint Semiconductor]
|
| IDT70914S25PI IDT70914S25PB IDT70914S25P 70914_DS_ |
Low-Noise JFET-Input Operational Amplifier 14-PDIP 0 to 70 高6KK的9）同步双端口RAM
High Speed Low-Noise JFET-Input Quad Operational Amplifier 14-CFP -55 to 125 4K X 9 DUAL-PORT SRAM, 25 ns, PQCC68
High Speed Low-Noise JFET-Input Quad Operational Amplifier 14-CDIP -55 to 125 4K X 9 MULTI-PORT SRAM, 25 ns, PQCC68
High Speed Low-Noise JFET-Input Quad Operational Amplifier 20-LCCC -55 to 125
HIGH SPEED 36K (4K X 9) SYNCHRONOUS DUAL-PORT RAM
From old datasheet system
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| L1935 |
Low Noise Amplifier 1800-1950 MHz, 35 dB Gain, 0.9dB Noise Figure
|
PDI[PREMIER DEVICES, INC.]
|
